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| Datasheet File OCR Text: |
| i nchange semiconductor isc product specification isc w ebsite is registered trademark 1 isc silicon pn p power transistor 2s a100 1 description high current capability collector - emitter breakdown voltage - : v ( br) ce o = - 1 30 v(m in. ) applications designed for audio and general purpose applications. absolute maximum rat ings (t a = 25 ) symbol parameter value unit v c bo collector - base v oltage - 1 3 0 v v ce o collector - e mitter v oltage - 1 3 0 v v ebo emitter - b ase v oltage - 6 v i c collector c urrent - continuous - 8 a p c collector p ower d issipat i on @ t c =25 8 0 w t j junction t emperature 15 0 t stg storage t emperature - 5 5 ~ 15 0
i nchange semiconductor isc product specification isc w ebsite is registered trademark 2 isc silicon pnp power transistor 2SA1001 electrical characteristics tj=25 v (br) ce o collector - e mitter breakdown v oltage i c = - 30 m a; i b = 0 - 1 3 0 v v (br) c bo collector - base breakdown v oltage i c = - 1m a; i e = 0 - 130 v v (br) ebo emitter - b ase breakdown v oltage i e = - 1m a; i c = 0 - 6 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 5 a ; i b = - 0. 5 a - 2.0 v i c b o collector c utoff c ur rent v c b = - 130 v ; i e = 0 - 50 a i ebo emitter c utoff c urrent v eb = - 6 v; i c = 0 - 50 a h fe dc c urrent g ain i c = - 0.5 a ; v ce = - 5 v 50 200 f t current - gain bandwidth product i c = - 1 a ; v ce = - 10 v 40 mhz |
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